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Preface to the Special Issue on Monoelemental 2D Semiconduct
时间:2020-08-04 08:49来源:未知 新皇冠体育:admin 点击:

Atomically monolayer 2D material was predicted thermal dynamically unstable, until the ground-breakthrough reports of the isolation of graphene in 2004, which was shortly recognized by the Nobel Prize in 2010. Monoelemental graphene inherits the merits of simple stoichiometry and crystal structure, which offers the possibilities for basic physics scenarios demonstrations and a great deal of functional devices explorations. The recent decades have witnessed the unprecedented enthusiasm of investigations and fruitful achievements on the nano-platform of graphene. Recently, the family of monoelemental 2D materials has embraced the birth of multiple members, including silicene, germanene, phosphorene, and so forth. Moreover, heterostructures and superlattices of monoelemental 2D materials have opened a new realm in materials science, offering unlimited possibilities.

In this special issue, we collected 6 original articles, 3 comprehensive reviews, and 2 research news from the leading research groups, and we are grateful to have received such warm feedback and support. This special issue presented the cutting-edge material fabrication techniques [Yixuan Fan et al.], remarkable performance of devices [Chang Li et al.], basic mechanism explorations [Carolien Castenmiller et al., Qian Yang et al.], theory predictions [Qiang Gao et al., Hengze Qu et al.], and state-of-art research progress reviews [Hanliu Zhao et al., Xiaolin Cai et al., and Peiwen Yuan et al. ] of monoelemental 2D materials. Particularly, Zhou et al. [Jingshu Zhou et al.] reported their exciting results of photodetectors based on 2D material/Si heterostructure, which shows the possibility of integrating of 2D materials and traditional semiconductor fabrication processes. Zhong et al. [Mianzeng Zhong et al.] introduced a novel single-element 2D semiconductor: black arsenic, which is analogous of black phosphorus and has been shown to demonstrate extraordinary electronic properties.

We sincerely hope that the researchers working in this hot area could benefit a lot from the published papers in this special issue. And we also welcome the authors working in this area could publish their high impact works in the Journal of Semiconductors.

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